| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,505 pcs
|
2505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IGW20N60H3 is a single Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. This component is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for a wide range of environmental conditions.
As an IGBT, it combines the high input impedance of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor. This makes it efficient for applications requiring fast switching and high power handling.
The IGW20N60H3 is part of Infineon's robust portfolio of power semiconductors, known for reliability and performance in demanding environments. Its specific electrical characteristics, such as voltage and current ratings, would need to be confirmed for precise application suitability.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IGW20N60H3 is RoHS3 Compliant.
The MSL for the IGW20N60H3 is 1 Unlimited.
The REACH status for the IGW20N60H3 is REACH Unaffected.