Mfr Part #:

IGT60R190D1SATMA1

Name: IGT60R190D1SATMA1
Brand: Infineon Technologies
SKU: IGT60R190D1SATMA1

Description:

GANFET N-CH 600V 12.5A 8HSOF

Stock on Request

IGT60R190D1SATMA1 Description

Short technical summary and product information.

GANFET N-CH 600V 12.5A 8HSOF

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	12.5A (Tc)
Drain to Source Voltage (Vdss)	600 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	157 pF @ 400 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	55.5W (Tc)
Supplier Device Package	PG-HSOF-8-3
Technology	GaNFET (Gallium Nitride)
Vgs (Max)	-10V
Vgs(th) (Max) @ Id	1.6V @ 960µA