| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,020 pcs
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3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| SVHC Present | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
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The IGT60R070D1ATMA4 is a 600V enhancement-mode GaNFET (Gallium Nitride) power transistor from Infineon's CoolGaN™ family. It offers ultra-fast switching with zero reverse recovery charge (Qrr=0 nC), enabling high efficiency in power conversion systems. Key electrical characteristics include a maximum drain-source on-resistance of 70 mΩ, typical gate charge of 5.8 nC, and output charge of 41 nC at 400V. The device supports continuous drain current of 31A at case temperature and pulsed current up to 60A.
Designed for industrial, telecom, and datacenter switched-mode power supplies (SMPS), the IGT60R070D1ATMA4 is optimized for half-bridge topologies including totem pole PFC and high-frequency LLC converters. Its superior commutation ruggedness and low gate/output charge allow higher operating frequencies and improved power density.
The transistor is housed in a surface-mount 8-PowerSFN package (PG-HSOF-8-3) with a Kelvin source connection for improved gate drive performance. Maximum power dissipation is 125W, and the operating junction temperature range spans -55°C to 150°C.
600 V.
70 mΩ maximum.
5.8 nC typical.
31 A at case temperature.
-55°C to 150°C junction temperature.
8-PowerSFN (PG-HSOF-8-3).
Yes, RoHS3 compliant (unverified).