| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IGT60R070D1 is a 600V CoolGaN enhancement-mode power transistor designed for high-efficiency power conversion.
Key electrical specifications include a maximum drain-source voltage of 600V, a maximum on-resistance of 70mΩ, and a typical gate charge of 5.8nC. It also features a pulsed drain current capability of 60A and an output charge of 41nC at 400V. The transistor is characterized by ultra-fast switching speeds and no reverse-recovery charge, enabling improved system efficiency and power density.
This GaN transistor is qualified for industrial applications according to JEDEC Standards. Its benefits include enabling higher operating frequencies and reducing EMI. It is suitable for industrial, telecom, and datacenter switch-mode power supply (SMPS) applications, particularly those based on half-bridge topologies for hard and soft switching, such as Totem pole PFC and high-frequency LLC converters.
The IGT60R070D1 comes in a PG-HSOF-8-3 package, designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V at 25°C.
The package is PG-HSOF-8-3.
The maximum on-resistance is 70mΩ at 25°C.
The typical gate charge is 5.8nC.
The maximum pulsed drain current is 60A at 25°C.
The typical reverse-recovery charge is 0nC.