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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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19 pcs
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19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (IC) @ 25°C | |
| Current | |
| Gate Charge | |
| Gate Threshold Voltage (Vge(th)) | |
| Gate-Emitter Leakage Current (IGES) | |
| Gate-Emitter Voltage (VGE) | |
| Halogen Free | |
| Input Capacitance (Cies) | |
| Input Type | |
| Internal Emitter Inductance (LE) | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Coes) | |
| Package Type | |
| Power | |
| Pulsed Collector Current | |
| Reverse Transfer Capacitance (Cres) | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Thermal Resistance Junction-Ambient (Rthja) | |
| Thermal Resistance, Junction-Case (RthJC) | |
| Transconductance (gfs) | |
| Turn-Off Delay Time (td(off)) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| Zero Gate Voltage Collector Current (ICES) |
The Infineon IGD01N120H2BUMA1 is a 1200V N-channel IGBT using second-generation HighSpeed 2 technology. It is designed for soft-switching and resonant converter applications such as switch-mode power supplies (SMPS) and lamp ballasts.
Key electrical ratings include a triangular collector current of 3.2 A at 25°C (140 kHz), a pulsed collector current of 3.5 A, a maximum collector-emitter voltage of 1200 V, and a power dissipation of 28 W. Typical gate charge is 8.6 nC, and turn-off switching energy is 140 µJ under standard test conditions (800V, 1A). The device features a low typical collector-emitter saturation voltage of 2.2 V at 15 V gate drive and 1 A.
This IGBT is offered in a surface-mount PG-TO-252-3-11 (DPak) package and has a maximum junction temperature of 150 °C. It is RoHS compliant with Pb-free lead plating and qualified according to JEDEC standards for target applications.
The maximum collector-emitter voltage is 1200 V.
The triangular collector current is 3.2 A at TC=25°C and 140 kHz. Pulsed collector current is 3.5 A.
The maximum junction temperature is 150 °C and the storage temperature range is -40 °C to 150 °C.
Yes, it is RoHS3 compliant with Pb-free lead plating as verified in the datasheet.
It is supplied in a surface-mount PG-TO-252-3-11 package, also known as TO-252-3 or DPAK.
The typical gate charge (Qg) is 8.6 nC at VCE=960V, IC=1A, and VGE=15V.
The thermal resistance junction-to-case (RthJC) is 4.5 K/W maximum. Junction-to-ambient on a PCB is 50 K/W maximum.