| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,228 pcs
|
3228 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Infineon Technologies IGB110S10S1XTMA1 is a medium-voltage Gallium Nitride (GaN) transistor. This component is part of Infineon's power transistor offerings, designed for various electronic applications requiring efficient power switching.
Key specifications include RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1, indicating its suitability for a wide range of manufacturing environments. The REACH status is noted as unaffected.
As a GaN transistor, it offers potential advantages in terms of performance and efficiency compared to traditional silicon-based devices. Its application context typically involves power conversion, motor drives, and other high-frequency power management systems where advanced semiconductor technology is beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.41 | $2.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IGB110S10S1XTMA1 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.