IDWD30G120C5XKSA1 The IDWD30G120C5XKSA1 is a 1200V, 87A silicon carbide Schottky diode from Infineon Technologies. It features a low forward voltage of 1.65V at 30A and is housed in a TO-247-2 package.
Mfr Part #:

IDWD30G120C5XKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IDWD30G120C5XKSA1 is a 1200V, 87A silicon carbide Schottky diode from Infineon Technologies. It features a low forward voltage of 1.65V at 30A and is housed in a TO-247-2 package.
Total Stock: 1,230 pcs
$ Price Range: $6.41 - $13.91

IDWD30G120C5XKSA1 Available from 1 distributor

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IDWD30G120C5XKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Current
Current - DC Forward (If) (Max)
Industrial Grade
Mounting Type
Operating Temperature
Reverse Recovery Time (trr)
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Voltage
Voltage - DC Reverse (Vr)

IDWD30G120C5XKSA1 Description

Short technical summary and product information.

The IDWD30G120C5XKSA1 is a 5th generation CoolSiC silicon carbide Schottky diode from Infineon Technologies. It is rated for a maximum reverse voltage of 1200V and an average rectified current of 87A. The diode features a low forward voltage of 1.65V at a forward current of 30A, contributing to high system efficiency.

 

This SiC Schottky diode offers no reverse recovery current and no forward recovery, enabling higher frequency operation and increased power density in designs. Its temperature-independent switching behavior and specified dv/dt ruggedness make it suitable for demanding industrial applications. The device is qualified for industrial applications according to relevant JEDEC 47/20/22 tests.

 

The diode is housed in a PG-TO247-2 package with pin 1 and backside as cathode and pin 2 as anode. It is Pb-free lead plating and RoHS compliant. Potential applications include industrial power supplies, industrial UPS, charging infrastructure, welding equipment, and solar inverters including central, string, and optimizer configurations.

IDWD30G120C5XKSA1 Quick Information

Product Type: Silicon Carbide Schottky Diode
Series: 5th Generation CoolSiC
Canonical Name: Silicon Carbide Schottky Diode, 1200V, 87A, TO-247-2
Subcategory: Rectifiers - Single

IDWD30G120C5XKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IDWD30G120C5XKSA1 Estimated Pricing

Qty Low High
1+ $13.91 $13.91
10+ $8.53 $8.53
100+ $7.15 $7.15
480+ $6.48 $6.48
1,200+ $6.41 $6.41

Estimated market price range - modelled values for guidance only, not live distributor offers.

IDWD30G120C5XKSA1 Features

  • 1200V maximum reverse voltage rating.
  • 87A average rectified current capability.
  • Low forward voltage of 1.65V at 30A.
  • No reverse recovery current operation.
  • RoHS compliant and Pb-free lead plating.

IDWD30G120C5XKSA1 Applications

  • Used in industrial power supply systems.
  • Suitable for industrial UPS applications.
  • Used in solar central and string inverters.
  • Applied in welding equipment and chargers.

IDWD30G120C5XKSA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage rating of the IDWD30G120C5XKSA1?

The maximum reverse voltage rating is 1200V.

What is the average rectified current rating of this diode?

The maximum average rectified current is 87A.

What is the forward voltage of the IDWD30G120C5XKSA1?

The maximum forward voltage is 1.65V at a forward current of 30A.

What package is the IDWD30G120C5XKSA1 available in?

The diode is available in a PG-TO247-2 package.

What is the maximum junction temperature of this device?

The maximum junction temperature is 175°C.

What is the charge stored during reverse recovery?

The charge stored during reverse recovery is 154nC.

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