| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,080 pcs
|
2080 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
865 pcs
|
865 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Energy | |
| Forward Current |
The Infineon IDW40G65C5 is a 650V Silicon Carbide (SiC) Schottky Diode from the thinQ! Generation 5 family. This diode is designed with revolutionary semiconductor material, offering benchmark switching behavior with no reverse or forward recovery and temperature-independent switching.
Key electrical specifications include a breakdown voltage of 650V, a nominal forward current of 40A at temperatures below 110°C, a typical charge of 55nC at 400V reverse voltage, and a typical energy of 12.8µJ at 400V reverse voltage. These characteristics contribute to system efficiency improvements and enable higher frequency and power density solutions.
The IDW40G65C5 is optimized for high-temperature operation and features Pb-free lead plating, making it RoHS compliant. It is qualified according to JEDEC standards for target applications.
Packaged in a PG-TO247-3, this diode is suitable for applications such as switch mode power supplies, power factor correction, solar inverters, and uninterruptible power supplies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 650V (nominal) at 88 mA.
The forward current rating is 40A at case temperatures below 110°C.
The package is PG-TO247-3.
The typical charge is 55 nC at VR=400V.
The typical energy is 12.8 µJ at VR=400V.