| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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198 pcs
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198 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Energy | |
| Forward Current | |
| Lead Style | |
| Mounting Type | |
| SVHC Present |
The Infineon IDW30G65C5 is a 650V Silicon Carbide (SiC) Schottky Diode from the thinQ!™ Generation 5 series. This diode utilizes revolutionary SiC material, providing benchmark switching behavior with no reverse or forward recovery and temperature-independent switching.
Key electrical characteristics include a 650V breakdown voltage and a 30A nominal forward current at temperatures below 115°C. It also features a typical charge of 42 nC and energy of 9.7 µJ at 400V reverse voltage.
Designed for high surge current capability and optimized for high-temperature operation, this diode offers system efficiency improvements over traditional Si diodes. Its benefits include reduced cooling requirements, enabling higher frequency and power density solutions, and increased system reliability.
The component is housed in a PG-TO247-3 package suitable for through-hole mounting. It features Pb-free lead plating and is RoHS compliant, qualified according to JEDEC standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 650V.
The forward current is 30A at temperatures below 115°C.
It is supplied in a PG-TO247-3 package.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.