| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IDT71V416S10PH is a 4Mbit asynchronous SRAM from Renesas, organized as 256K words by 16 bits. It uses a parallel interface and operates from a single 3.3V power supply (3.0V to 3.6V range). The device offers a fast 10ns access time and a 10ns write cycle time, making it suitable for high-speed data buffering and cache applications.
The memory is volatile and designed for surface mount assembly in a 44-pin TSOP II package. It operates over a commercial temperature range of 0°C to 70°C. The asynchronous architecture simplifies system integration by eliminating the need for a clock signal.
Typical applications include embedded systems, networking equipment, industrial controllers, and any design requiring moderate-density, high-speed SRAM with a parallel interface. The 3.3V operation helps reduce power consumption compared to 5V legacy parts.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4 Mbit.
256K x 16.
10 ns.
3.3V (3.0V to 3.6V range).
0°C to 70°C.
44-pin TSOP II.
Volatile.