| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas IDT71V416S10BEI is a high-speed CMOS Static RAM with a density of 4Mbit, organized as 256K x 16. It features an access time of 10ns and a write cycle time of 10ns, making it suitable for demanding memory applications.
This asynchronous SRAM operates from a single 3.3V power supply and offers LVTTL-compatible bidirectional data inputs and outputs. It requires no clocks or refresh cycles for operation, simplifying system design.
The IDT71V416S10BEI is available in a 48-CABGA (9x9) package, designed for surface mounting. Its JEDEC Center Power / GND pinout aids in reducing noise.
This component is fabricated using high-performance, high-reliability CMOS technology, providing a cost-effective solution for high-speed memory requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3.0V to 3.6V.
48-CABGA (9x9mm), 44-pin SOJ, and 44-pin TSOP Type II.
-40°C to +85°C.
4Mbit organized as 256K x 16.
10ns maximum.
Parallel.
Asynchronous SRAM.