| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas IDT71V3579S85PF is a high-speed synchronous Static Random Access Memory (SRAM) with a memory size of 4.5Mbit. It is organized as 256K x 18 bits and features a parallel memory interface. This SRAM supports SDR (Single Data Rate) technology and offers a fast access time of 8.5 ns, making it suitable for performance-critical applications.
The device operates within a supply voltage range of 3.135V to 3.465V, with a core power supply of 3.3V and 3.3V I/O. The operating temperature range is from 0°C to 70°C (TA). It is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP) with a 14x14mm body, designed for surface mounting.
This SRAM utilizes IDT's high-performance CMOS process. It supports self-timed write cycles with global write control and byte write enable capabilities. The optional Boundary Scan JTAG Interface (IEEE 1149.1 compliant) is also available. The power-down mode is controlled by the ZZ input.
While the product is listed as RoHS3 Compliant, the REACH and MSL statuses are marked as 'Unaffected' and '1 Unlimited' respectively, but these compliance details are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
3.135V to 3.465V.
0°C to 70°C (TA).
100-LQFP and 100-TQFP (14x14) packages.
4.5 Mbit.
256K x 18.
8.5 ns (maximum) for commercial and industrial temperature range.
SRAM - Synchronous, SDR.