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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IDT7133LA90GB is a high-performance 2K x 16 Dual-Port Static Random Access Memory (SRAM) manufactured by Integrated Device Technology. This component is designed for asynchronous operation and offers a maximum access time of 90 ns, making it suitable for various memory applications.
With a memory organization of 2K words by 16 bits, the IDT7133LA90GB provides a total memory density of 32768 bits. It operates within a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V. The device utilizes CMOS technology and is rated for a military temperature grade, operating from -55°C to 125°C.
The component is housed in a 68-pin Ceramic PGA (Pin Grid Array) package, featuring a square shape and grid array style. The package body is ceramic with a metal-sealed cofired construction. Terminal finish is Tin Lead, with perpendicular pin/peg terminals spaced at 2.54 mm. This through-hole mounted component is designed for parallel data transfer.
Key specifications include its dual-port SRAM architecture, 16-bit memory width, and asynchronous operating mode. The IDT7133LA90GB is suitable for applications requiring fast and reliable memory access within demanding environmental conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IDT7133LA90GB has an organization of 2K words by 16 bits.
The maximum access time (tACC) for the IDT7133LA90GB is 90 ns.
The supply voltage ranges from 4.5V to 5.5V, with a nominal value of 5V.
This component operates between -55°C and 125°C.
It is supplied in a 68-pin Ceramic PGA (Pin Grid Array) package.