| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,569 pcs
|
3569 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Renesas IDT71024S20TYI is a 1Mbit volatile SRAM memory integrated circuit. It utilizes asynchronous technology and offers a parallel memory interface with a memory organization of 128K x 8. The device has an access time of 20 ns and a write cycle time of 20 ns.
Designed for a wide operating temperature range of -40°C to 85°C, this component is suitable for various environmental conditions. It requires an operating voltage between 4.5V and 5.5V. The memory IC is provided in a 32-SOJ package, designed for surface mount installation.
Compliance includes RoHS3 status, Moisture Sensitivity Level 1, and REACH Unaffected. This part is ideal for applications requiring reliable and fast memory storage within specified voltage and temperature parameters.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1Mbit.
20 ns.
4.5V to 5.5V.
-40°C to 85°C.
32-SOJ (32-BSOJ, 0.300", 7.62mm width).
128K x 8.