| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Access Time | |
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| Technology |
The IDT6116SA55TDB is a 16,384-bit (organized as 2K x 8) CMOS Asynchronous Static RAM designed for 5.0V operation. Manufactured by Integrated Device Technology (IDT), this memory device offers high-speed access times with multiple speed grades available including 20, 25, 35, 45, 55, 70, 90, 120, and 150 ns maximum. The CMOS technology provides low power consumption and virtually eliminates alpha particle soft-error rates. The device supports battery backup operation with a data retention voltage of 2V (LA version only). It is fully static, requiring no clocks or refresh, and has TTL-compatible inputs and outputs. The IDT6116SA55TDB is available in a 24-pin DIP package (ceramic or plastic). It is RoHS3 compliant, REACH unaffected, and has an MSL of 1 (unlimited). This SRAM is suitable for applications requiring high-speed, low-power memory in industrial, commercial, and military temperature ranges.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
5.0V.
24-pin DIP (Dual In-line Package).
Yes, it is RoHS3 compliant.
2K x 8 (16k bits).
20, 25, 35, 45, 55, 70, 90, 120, and 150 ns.
2V (for LA version variants).
CMOS.