| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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74 pcs
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74 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
35 pcs
|
35 pcs | On Request | 1 | On Request | On Request | 9643 | On Request | On Request |
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| Technology |
This Integrated Device Technology IDT6116LA90DB is a CMOS memory integrated circuit. It is organized as 2k words, with each word being 8 bits wide. The component features a maximum access time of 90ns and a write pulse width of 90ns.
Packaged in a DIP24 case, this IC is designed for through-hole mounting. It operates within a temperature range of -55°C to 125°C. The output configuration is 3-State, and it has a maximum power dissipation of 1.0W.
This memory IC is suitable for various electronic applications requiring reliable data storage and retrieval. Its specifications make it a component for systems needing specific memory access speeds and operating conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is organized as 2,048 words by 8 bits (2k x 8).
The maximum access time is 90 ns.
The operating temperature range is -55°C to +125°C.
The device is available in a 24-pin DIP (Dual In-line Package) with through-hole mounting.
The outputs are 3-State.
Maximum power dissipation is 1.0 W.
The minimum write pulse width is 90 ns.