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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Reverse Recovery Time (trr) | |
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The IDT12S60C is a Silicon Carbide (SiC) Schottky diode from Infineon Technologies, designed for high-efficiency power conversion. It offers a reverse voltage rating of 600V and an average rectified current of 12A, with a typical forward voltage of 1.7V at 12A. The diode exhibits zero reverse recovery time (trr = 0 ns), enabling fast switching and reduced losses in high-frequency applications.
This through-hole component is housed in a TO-220-2 package (supplier package PG-TO220-2-2) and operates over a junction temperature range of -55°C to 175°C. The junction capacitance is 530 pF at 1V and 1 MHz, supporting smooth switching behavior. The SiC Schottky technology provides improved thermal performance and reliability compared to conventional silicon diodes.
Ideal for power factor correction, switched-mode power supplies, and induction heating, the IDT12S60C is suitable for demanding industrial and automotive environments. Its robust construction and wide temperature range make it a reliable choice for high-power designs.
600V.
12A.
1.7V at 12A forward current.
0 ns (no recovery time).
TO-220-2 (supplier package PG-TO220-2-2).
-55°C to 175°C.
Silicon Carbide (SiC) Schottky.