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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The IDP30E60 is a fast switching diode from Infineon featuring a repetitive peak reverse voltage of 600V and continuous forward current of 52.3A at 25°C case temperature (34.9A at 90°C). It offers a typical forward voltage of 1.5V at 30A and 25°C, and a reverse recovery time of 126ns typical at 25°C. The diode is capable of handling 117A non-repetitive surge current.
Designed for high efficiency power conversion, the IDP30E60 provides soft switching and low reverse recovery charge, making it suitable for continuous current mode (CCM) boost diodes and power factor correction circuits. The maximum junction temperature is 175°C, and thermal resistance from junction to case is 1.05 K/W.
The device is housed in a through-hole TO-220-2 package (PG-TO220-2) and is RoHS compliant, halogen-free, and Pb-free. It is qualified according to JEDEC for target applications.
The IDP30E60 has a repetitive peak reverse voltage (VRRM) of 600 V.
The continuous forward current (IF) is 52.3 A at case temperature 25°C and 34.9 A at 90°C.
The typical forward voltage is 1.5 V at 30 A and 25°C, with a maximum of 2 V.
The typical reverse recovery time (trr) is 126 ns at 25°C under specified conditions (VR=400V, IF=30A, di/dt=1000A/µs).
The IDP30E60 is available in a TO-220-2 through-hole package (PG-TO220-2).
The non-repetitive surge forward current (IFSM) is 117 A at 25°C, 10 ms sine halfwave.
The operating junction temperature range is -40°C to 175°C.