IDM02G120C5XTMA1 Infineon IDM02G120C5XTMA1 is a 1200V, 2A Silicon Carbide Schottky diode in a TO-252-2 surface mount package. It features zero reverse recovery and low forward voltage.
Mfr Part #:

IDM02G120C5XTMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IDM02G120C5XTMA1 is a 1200V, 2A Silicon Carbide Schottky diode in a TO-252-2 surface mount package. It features zero reverse recovery and low forward voltage.
Total Stock: 925 pcs
$ Price Range: $0.84 - $2.88

IDM02G120C5XTMA1 Available from 1 distributor

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IDM02G120C5XTMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Average Forward Current
Capacitance @ Vr, F
Current
Industrial Grade
Maximum Junction Temperature
Mounting Type
Operating Temperature
Repetitive Peak Reverse Voltage
Reverse Recovery Time (trr)
SVHC Present
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Total Capacitive Charge
Voltage

IDM02G120C5XTMA1 Description

Short technical summary and product information.

The IDM02G120C5XTMA1 is a 5th generation CoolSiC™ Silicon Carbide Schottky diode from Infineon Technologies. It is rated for a repetitive peak reverse voltage of 1200V and an average forward current of 2A. The diode exhibits a typical forward voltage of 1.65V at 2A and has zero reverse recovery time due to its Schottky nature. It offers a typical junction capacitance of 182pF at 1V and 1MHz, and a total capacitive charge of 14nC. The maximum junction temperature is 175°C, with an operating temperature range of -55°C to 175°C. This diode is designed for high efficiency power conversion applications such as solar inverters, UPS, motor drives, and power factor correction. It is housed in a PG-TO252-2 surface mount package (also known as TO-252-3, DPak). The device is RoHS compliant and has Pb-free lead plating. Its SiC technology enables no reverse recovery current, temperature-independent switching, and excellent thermal performance.

IDM02G120C5XTMA1 Quick Information

Product Type: Silicon Carbide Schottky Diode
Series: 5th Generation
Canonical Name: Infineon IDM02G120C5XTMA1 1200V 2A SiC Schottky Diode
Subcategory: Single Diodes

IDM02G120C5XTMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IDM02G120C5XTMA1 Estimated Pricing

Qty Low High
1+ $2.88 $2.88
10+ $1.85 $1.85
100+ $1.26 $1.26
500+ $1.01 $1.01
1,000+ $0.93 $0.93
2,500+ $0.84 $0.84

Estimated market price range - modelled values for guidance only, not live distributor offers.

IDM02G120C5XTMA1 Features

  • 1200V repetitive peak reverse voltage.
  • 2A average forward current rating.
  • Zero reverse recovery time (Schottky).
  • Low forward voltage of 1.65V at 2A.
  • 175°C maximum junction temperature.

IDM02G120C5XTMA1 Applications

  • Used in solar inverter power stages.
  • Ideal for uninterruptible power supplies.
  • Suitable for motor drive circuits.
  • Applied in power factor correction.

IDM02G120C5XTMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the IDM02G120C5XTMA1?

The repetitive peak reverse voltage (VRRM) is 1200V.

What is the average forward current rating?

The maximum average forward current (IF(AV)) is 2A.

What is the forward voltage drop at rated current?

The typical forward voltage (VF) is 1.65V at IF=2A.

Does this diode have reverse recovery time?

No, it is a Schottky diode with zero reverse recovery time (trr=0ns).

What package is the IDM02G120C5XTMA1 available in?

It comes in a PG-TO252-2 surface mount package (TO-252-3, DPak).

What is the maximum junction temperature?

The maximum junction temperature is 175°C.

What type of diode is this?

It is a Silicon Carbide (SiC) Schottky diode from the 5th generation CoolSiC™ family.

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