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6,413 pcs
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6413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IDL08G65C5 is a 5th Generation thinQ!™ SiC Schottky Diode designed for high-efficiency power applications. Utilizing revolutionary Silicon Carbide material, this diode offers benchmark switching behavior with no reverse or forward recovery and temperature-independent switching.
Key electrical characteristics include a breakdown voltage of 650V tested at 18 mA, a typical charge (Qc) of 13 nC at 400V, and a typical energy (Ec) of 2.9 µJ at 400V. It is rated for a typical current of 8A at temperatures below 150°C, with high surge current capability.
The diode is Pb-free and RoHS compliant, optimized for high-temperature operation. Its benefits include system efficiency improvement, reduced cooling requirements, and higher system reliability due to lower operating temperatures. The package type is PG-VSON-4, suitable for surface mount applications.
Applications include switch mode power supplies, power factor correction, solar inverters, and uninterruptible power supplies.
The typical breakdown voltage is 650V tested at 18 mA.
The typical forward current rating is 8A at case temperature below 150°C.
It is available in a PG-VSON-4 surface mount package.
The typical stored charge is 13nC at VR=400V.
The typical capacitive energy is 2.9µJ at VR=400V.