| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
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| Reverse Recovery Time (trr) | |
| SVHC Present | |
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| Technology | |
| Voltage |
The IDK06G65C5XTMA2 is a 5th generation thinQ!™ SiC Schottky diode from Infineon Technologies. It is rated for 650V reverse voltage and 6A average rectified current. The diode exhibits zero reverse recovery time (trr = 0 ns) due to its Silicon Carbide Schottky technology, enabling high-frequency switching with minimal losses. Key electrical parameters include a forward voltage of 1.8V at 6A, typical capacitance of 190pF at 1V/1MHz, and a charge (Qc) of 10nC at 400V. The device is designed for high-temperature operation with a junction temperature range of -55°C to 175°C. It is housed in a PG-TO263-2 surface-mount package (TO-263-3, D²Pak), suitable for automated assembly. Typical applications include switch-mode power supplies, power factor correction, solar inverters, and uninterruptible power supplies. The diode is RoHS compliant and qualified according to JEDEC standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.59 | $3.59 |
| 10+ | $2.34 | $2.34 |
| 100+ | $1.63 | $1.63 |
| 500+ | $1.32 | $1.32 |
| 1,000+ | $1.05 | $1.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
6A.
1.8V at 6A.
0 ns (no reverse recovery).
PG-TO263-2 (TO-263-3, D²Pak).
-55°C to 175°C.
190pF at 1V, 1MHz.