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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Capacitance @ Vr, F | |
| Charge (Qc) | |
| Current | |
| Energy (EC) | |
| Forward Current (DC) | |
| Industrial Grade | |
| Lead Count | |
| Max dv/dt Ruggedness | |
| Mounting Type | |
| Operating Temperature | |
| Package Code | |
| Repetitive Peak Reverse Voltage | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| VF (Typical @ IF=16 A, Tj=25 °C) | |
| Voltage |
The IDH16G65C6XKSA1 is a 650V, 16A Silicon Carbide (SiC) Schottky diode from Infineon's 6th Generation CoolSiC family. It offers a typical forward voltage of 1.25V at 16A and 25°C, and zero reverse recovery time due to its Schottky barrier technology, enabling high efficiency and high frequency operation.
Key electrical characteristics include a repetitive peak reverse voltage of 650V, DC forward current of 16A at case temperature up to 135°C, total capacitive charge (Qc) of 21.5 nC at 400V, and energy (Ec) of 4.3 µJ at 400V. The diode exhibits high dv/dt ruggedness of 150 V/ns, making it suitable for demanding switching applications.
This diode is packaged in a PG-TO220-2 through-hole package, offering robust mechanical mounting. Potential applications include power factor correction (PFC) in switched-mode power supplies, solar inverters, and uninterruptible power supplies (UPS) where high efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.64 | $7.64 |
| 10+ | $4.10 | $4.10 |
| 100+ | $3.76 | $3.76 |
| 500+ | $3.33 | $3.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
16A DC at case temperature ≤135°C, duty cycle 1.
1.25V at 16A and 25°C junction temperature.
0 ns (zero recovery time, typical for SiC Schottky diodes).
PG-TO220-2, through-hole mounting.
150 V/ns.
21.5 nC.