IDH16G65C6XKSA1 Infineon IDH16G65C6XKSA1 is a 650V, 16A SiC Schottky diode from the 6th Generation CoolSiC family. Features include typical forward voltage of 1.25V and 150 V/ns dv/dt ruggedness.
Mfr Part #:

IDH16G65C6XKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IDH16G65C6XKSA1 is a 650V, 16A SiC Schottky diode from the 6th Generation CoolSiC family. Features include typical forward voltage of 1.25V and 150 V/ns dv/dt ruggedness.
Total Stock: 3,020 pcs
$ Price Range: $3.33 - $7.64

IDH16G65C6XKSA1 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,020 pcs
3020 pcs On Request 1 On Request On Request On Request On Request On Request

IDH16G65C6XKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance
Capacitance @ Vr, F
Charge (Qc)
Current
Energy (EC)
Forward Current (DC)
Industrial Grade
Lead Count
Max dv/dt Ruggedness
Mounting Type
Operating Temperature
Package Code
Repetitive Peak Reverse Voltage
Reverse Recovery Time (trr)
SVHC Present
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
VF (Typical @ IF=16 A, Tj=25 °C)
Voltage

IDH16G65C6XKSA1 Description

Short technical summary and product information.

The IDH16G65C6XKSA1 is a 650V, 16A Silicon Carbide (SiC) Schottky diode from Infineon's 6th Generation CoolSiC family. It offers a typical forward voltage of 1.25V at 16A and 25°C, and zero reverse recovery time due to its Schottky barrier technology, enabling high efficiency and high frequency operation.

 

Key electrical characteristics include a repetitive peak reverse voltage of 650V, DC forward current of 16A at case temperature up to 135°C, total capacitive charge (Qc) of 21.5 nC at 400V, and energy (Ec) of 4.3 µJ at 400V. The diode exhibits high dv/dt ruggedness of 150 V/ns, making it suitable for demanding switching applications.

 

This diode is packaged in a PG-TO220-2 through-hole package, offering robust mechanical mounting. Potential applications include power factor correction (PFC) in switched-mode power supplies, solar inverters, and uninterruptible power supplies (UPS) where high efficiency and reliability are critical.

IDH16G65C6XKSA1 Quick Information

Product Type: SiC Schottky Diode
Series: 6th Generation G6
Canonical Name: Infineon Technologies IDH16G65C6XKSA1 SiC Schottky Diode, 650V, 16A, TO-220-2
Subcategory: SiC Schottky Diode

IDH16G65C6XKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IDH16G65C6XKSA1 Estimated Pricing

Qty Low High
1+ $7.64 $7.64
10+ $4.10 $4.10
100+ $3.76 $3.76
500+ $3.33 $3.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

IDH16G65C6XKSA1 Features

  • 650V repetitive peak reverse voltage.
  • 16A forward current rating.
  • Typical forward voltage of 1.25V.
  • Zero reverse recovery time.
  • 150 V/ns dv/dt ruggedness.

IDH16G65C6XKSA1 Applications

  • Power factor correction in SMPS.
  • Solar inverter circuits.
  • Uninterruptible power supplies.
  • High frequency switching applications.

IDH16G65C6XKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the repetitive peak reverse voltage of the IDH16G65C6XKSA1?

650V.

What is the forward current rating?

16A DC at case temperature ≤135°C, duty cycle 1.

What is the typical forward voltage?

1.25V at 16A and 25°C junction temperature.

What is the reverse recovery time?

0 ns (zero recovery time, typical for SiC Schottky diodes).

What is the package type?

PG-TO220-2, through-hole mounting.

What is the dv/dt ruggedness?

150 V/ns.

What is the total capacitive charge (Qc) at 400V?

21.5 nC.

Home
Account

Categories