| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | 220 | On Request | On Request |
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| Manufacturer Name | |
| Energy | |
| Forward Current | |
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The Infineon IDH16G65C5 is a 650V Silicon Carbide (SiC) Schottky Diode from the thinQ! Generation 5 family. This diode utilizes revolutionary SiC material for benchmark switching behavior with no reverse or forward recovery.
Key electrical characteristics include a 650V breakdown voltage and a 16A forward current at temperatures below 135°C. It also exhibits a typical charge of 23nC and energy of 5.3µJ at 400V reverse voltage. The device is optimized for high-temperature operation and offers system efficiency improvements over traditional silicon diodes.
Designed for applications such as switch mode power supplies, power factor correction, solar inverters, and uninterruptible power supplies, the IDH16G65C5 is qualified according to JEDEC standards. It comes in a PG-TO220-2 package suitable for through-hole mounting.
This component features Pb-free lead plating and is RoHS compliant, making it suitable for environmentally conscious designs. Its high surge current capability and temperature-independent switching behavior contribute to higher system reliability and reduced EMI.
The breakdown voltage is 650V.
The forward current is 16A.
It comes in a PG-TO220-2 package.
Yes, it is RoHS3 Compliant.
The MSL is 1 Unlimited.
Yes, it features Pb-free lead plating.