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IDH12SG60C The Infineon IDH12SG60C is a 3rd Generation thinQ! SiC Schottky Diode designed for fast switching applications. It offers a 600V repetitive peak reverse voltage and 12A continuous forward current.
Mfr Part #:

IDH12SG60C

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IDH12SG60C is a 3rd Generation thinQ! SiC Schottky Diode designed for fast switching applications. It offers a 600V repetitive peak reverse voltage and 12A continuous forward current.
✓ Total Stock: 6,277 pcs

IDH12SG60C Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
3,680 pcs
On Request
3680 pcs On Request 1 On Request On Request 1340+1344+1336+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
2,597 pcs
On Request
2597 pcs On Request 1 On Request On Request On Request On Request On Request
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IDH12SG60C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Continuous Forward Current
Package / Case
Power Dissipation
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IDH12SG60C Description

Short technical summary and product information.

The Infineon IDH12SG60C is a high-performance Silicon Carbide (SiC) Schottky Diode from the 3rd Generation thinQ! family. Designed for demanding fast switching applications, this diode features a revolutionary semiconductor material for benchmark switching behavior with no reverse or forward recovery.

 

Key electrical specifications include a repetitive peak reverse voltage of 600V and a continuous forward current of 12A at 130°C case temperature. It boasts a high surge current capability of up to 430A for 10µs pulses and a low typical forward voltage of 1.8V at 12A and 25°C.

 

This diode is optimized for high-temperature operation, with an operating and storage temperature range of -55°C to 175°C. It is housed in a PG-TO220-2 package, suitable for various mounting configurations.

 

Applications include Switched-Mode Power Supplies (SMPS) like CCM PFC, Motor Drives, Solar Applications, and Uninterruptible Power Supplies (UPS). Its temperature-independent switching behavior and high surge capability make it a robust choice for power electronics.

IDH12SG60C Quick Information

Product Type: SiC Schottky Diode
Series: 3rd Generation
Canonical Name: Infineon IDH12SG60C 3rd Generation thinQ! SiC Schottky Diode
Subcategory: Rectifier

IDH12SG60C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IDH12SG60C Features

  • Revolutionary Silicon Carbide material.
  • Benchmark switching behavior.
  • No reverse recovery.
  • High surge current capability.
  • Optimized for high temperature operation.

IDH12SG60C Applications

  • Ideal for SMPS applications.
  • Suitable for motor drives.
  • Used in solar applications.
  • Applicable for UPS systems.

IDH12SG60C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the voltage rating of the IDH12SG60C?

The repetitive peak reverse voltage is 600V, and the DC blocking voltage is also 600V.

What is the continuous forward current rating?

12A at case temperature below 130°C.

What is the forward voltage of the diode?

Typical 1.8V and maximum 2.1V at 12A and 25°C.

What is the package type of the IDH12SG60C?

PG-TO220-2.

What is the operating temperature range?

-55 to 175°C.

What is the peak surge current capability?

59A at 25°C for 10ms pulse.

What is the thermal resistance junction-to-case?

1.2 K/W maximum.

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