| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,425 pcs
|
3425 pcs | On Request | 1 | On Request | On Request | 1349+1404+ | On Request | On Request | |
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | 220 | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Energy | |
| Forward Current | |
| Lead Style |
The Infineon IDH12G65C5 is a 5th Generation thinQ! Silicon Carbide (SiC) Schottky Barrier Diode. This revolutionary semiconductor material provides benchmark switching behavior with no reverse or forward recovery and temperature-independent switching.
Key electrical parameters include a 650V breakdown voltage, a typical forward current of 12A at temperatures below 140°C, a typical charge of 18nC at 400V reverse voltage, and a typical energy of 4.1µJ at 400V reverse voltage. The diode is optimized for high temperature operation and features Pb-free lead plating, making it RoHS compliant.
Designed to complement 650V CoolMOS families, the IDH12G65C5 is suitable for applications such as switch mode power supplies, power factor correction, solar inverters, and uninterruptible power supplies. Its SiC material offers system efficiency improvements, reduced cooling requirements, and higher power density solutions compared to traditional Silicon diodes.
The component is housed in a PG-TO220-2 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 650V.
The typical forward current is 12A.
The typical charge is 18nC.
The typical energy is 4.1µJ.
It is in a PG-TO220-2 package.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.