| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,414 pcs
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1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Capacitance @ Vr, F | |
| Conflict Minerals | |
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| Halogen Free | |
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The Infineon IDH10SG60C is a third-generation thinQ! SiC Schottky diode rated for 600V repetitive peak reverse voltage and 10A continuous forward current (TC<130°C). It offers benchmark switching behavior with no reverse recovery and no forward recovery, enabling high-frequency operation.
Key electrical characteristics include a typical forward voltage of 1.8V at 10A and 25°C, reverse current of 0.8µA typical at 600V, and total capacitive charge of 16nC. The diode can handle non-repetitive surge currents up to 51A at 25°C and has an i²t rating of 13 A²s. Maximum power dissipation is 120W at 25°C case temperature.
The device is housed in a PG-TO220-2-2 package with through-hole mounting. It operates over a junction temperature range of -55°C to 175°C and has a maximum junction-to-case thermal resistance of 1.25 K/W. The part is RoHS compliant with Pb-free lead plating.
The maximum repetitive peak reverse voltage is 600V at Tj=25°C.
The maximum continuous forward current is 10A when the case temperature is below 130°C.
No, the IDH10SG60C has zero reverse recovery time due to its SiC Schottky technology.
The typical forward voltage is 1.8V at 10A and 25°C, with a maximum of 2.1V.
The IDH10SG60C is available in a PG-TO220-2-2 package (TO-220-2) with through-hole mounting.
The operating junction temperature range is -55°C to 175°C.
The non-repetitive peak forward current is 51A at TC=25°C and 44A at TC=150°C for a 10ms sine halfwave.