Mfr Part #:

IDH10G65C6

Mfr Name: Infineon

The Infineon IDH10G65C6 is a 650V SiC Schottky diode from the CoolSiC™ Generation 6 family. It offers a typical forward voltage of 1.25V at 10A.

✓ Total Stock: 1,190 pcs

IDH10G65C6 Available from 1 distributor

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,190 pcs On Request	1190 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IDH10G65C6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Energy	2.7 µJ
Forward Current	10 A
Forward Voltage	1.25 V
Mounting Type	Through Hole
Package / Case	PG-TO220-2
Reverse Voltage	650 V

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IDH10G65C6 Description

Short technical summary and product information.

The Infineon IDH10G65C6 is a 650V Silicon Carbide (SiC) Schottky barrier diode, part of the CoolSiC™ Generation 6 (G6) technology. This diode is designed to complement 600V and 650V CoolMOS™ 7 families, meeting stringent application requirements.

Key electrical characteristics include a maximum reverse voltage (VRRM) of 650V, a typical forward voltage (VF) of 1.25V at 10A, and a typical forward current (IF) of 10A at or below 140°C. It also features a typical charge (QC) of 14.7 nC and energy (EC) of 2.7 µJ at 400V reverse voltage.

The diode exhibits high dv/dt ruggedness of 150 V/ns. Its figure of merit (Qc x VF) is optimized for improved efficiency across all load conditions.

Packaged in a PG-TO220-2 case, this component is suitable for through-hole mounting. Potential applications include power factor correction in SMPS, solar inverters, and uninterruptible power supplies.

IDH10G65C6 Quick Information

Product Type: SiC Schottky Diode

Series: Generation 6 (G6)

Canonical Name: Infineon IDH10G65C6 650V SiC Schottky Diode

Subcategory: Schottky Diode

IDH10G65C6 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IDH10G65C6 Features

650V reverse voltage rating.
1.25V typical forward voltage.
10A maximum forward current.
High dv/dt ruggedness.
CoolSiC™ Generation 6 technology.

IDH10G65C6 Applications

Power factor correction (PFC) circuits.
Switch-mode power supplies (SMPS).
DC-DC converters and boost stages.
Motor drive inverter input rectification.

IDH10G65C6 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the reverse voltage rating of the IDH10G65C6?

The maximum reverse voltage (VRRM) is 650 V.

What is the forward current rating of this diode?

The maximum forward current is 10 A at TC ≤ 140 °C with duty cycle D=1.

What is the typical forward voltage of the IDH10G65C6?

The typical forward voltage is 1.25 V at IF = 10 A and Tj = 25 °C.

What package does the IDH10G65C6 come in?

The diode is supplied in a PG-TO220-2 through-hole package.

What is the dv/dt ruggedness of the IDH10G65C6?

The typical dv/dt ruggedness is 150 V/ns.

Does the IDH10G65C6 have low stored charge?

Yes, it has a typical stored charge of 14.7 nC at VR = 400 V.