IDH10G120C5XKSA1 The IDH10G120C5XKSA1 is a 1200V, 10A Silicon Carbide Schottky diode from Infineon. It offers zero reverse recovery time and a low forward voltage of 1.8V in a TO-220-2 through-hole package.
Mfr Part #:

IDH10G120C5XKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IDH10G120C5XKSA1 is a 1200V, 10A Silicon Carbide Schottky diode from Infineon. It offers zero reverse recovery time and a low forward voltage of 1.8V in a TO-220-2 through-hole package.
Total Stock: 2,020 pcs
$ Price Range: $2.02 - $5.26

IDH10G120C5XKSA1 Available from 1 distributor

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IDH10G120C5XKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance @ Vr, F
Current
Forward Voltage (Vf) @ 10A
Industrial Grade
Lead Style
Max Junction Temperature
Mounting Type
Operating Temperature
Reverse Recovery Time (trr)
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Voltage
Voltage - DC Reverse (Vr) (Max)

IDH10G120C5XKSA1 Description

Short technical summary and product information.

The IDH10G120C5XKSA1 is a 1200V, 10A silicon carbide (SiC) Schottky diode manufactured by Infineon Technologies, part of the 5th Generation CoolSiC™ family. It is designed for high-efficiency power conversion and features zero reverse recovery current and no forward recovery, which significantly reduces switching losses in high-frequency applications.

 

The diode is rated for a maximum DC reverse voltage of 1200V and an average rectified forward current of 10A. It has a forward voltage of 1.8V at 10A and a capacitance of 525pF at 1V and 1MHz. The device operates over a junction temperature range of -55°C to 175°C, with a maximum junction temperature of 175°C, making it suitable for demanding thermal environments.

 

Packaged in a through-hole TO-220-2 case (supplier package PG-TO220-2-1), this diode supports easy PCB mounting and effective heatsinking. It is qualified according to JEDEC standards and features excellent thermal performance, extended surge current capability, and specified dv/dt ruggedness. These characteristics make it well suited for solar inverters, uninterruptible power supplies, motor drives, and power factor correction circuits.

IDH10G120C5XKSA1 Quick Information

Product Type: Silicon Carbide Schottky Diode
Series: 5th Generation
Canonical Name: Silicon Carbide (SiC) Schottky Diode, 1200V, 10A, TO-220-2
Subcategory: Single Rectifier Diode

IDH10G120C5XKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IDH10G120C5XKSA1 Estimated Pricing

Qty Low High
1+ $5.26 $5.26
10+ $2.73 $2.73
100+ $2.49 $2.49
500+ $2.05 $2.05
1,000+ $2.02 $2.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

IDH10G120C5XKSA1 Features

  • Zero reverse recovery time for fast switching.
  • 1200V maximum DC reverse voltage rating.
  • 10A average rectified forward current.
  • Through-hole TO-220-2 package design.
  • 175°C maximum junction temperature.

IDH10G120C5XKSA1 Applications

  • Used in solar inverter circuits.
  • Suitable for uninterruptible power supplies.
  • Ideal for motor drive systems.
  • Enables power factor correction designs.

IDH10G120C5XKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum DC reverse voltage rating?

The maximum DC reverse voltage is 1200V.

What is the average rectified forward current rating?

The average rectified forward current is 10A.

What is the forward voltage at 10A?

The forward voltage is 1.8V at a forward current of 10A.

What is the reverse recovery time?

The reverse recovery time is 0 ns (zero reverse recovery).

What package is the diode available in?

The diode is available in a TO-220-2 through-hole package (PG-TO220-2-1).

What is the maximum junction temperature?

The maximum junction temperature is 175°C.

What is the diode capacitance at 1V?

The capacitance is 525pF at 1V, 1MHz.

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