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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Capacitance (Typical @ 300 V, 1 MHz) | |
| Capacitance (Typical @ 600 V, 1 MHz) | |
| Capacitance @ Vr, F | |
| Current | |
| Diode dV/dt Ruggedness | |
| Forward Voltage (Maximum @ 8 A) | |
| Forward Voltage (Typical @ 8 A, Tj=150 °C) | |
| Forward Voltage (Typical @ 8 A, Tj=25 °C) | |
| Halogen Free | |
| Industrial Grade | |
| I²t Value (Maximum @ tp=10 ms, Tc=150 °C) | |
| I²t Value (Maximum @ tp=10 ms, Tc=25 °C) | |
| Medical Grade | |
| Military Grade | |
| Mounting Torque | |
| Mounting Type | |
| Non-Repetitive Peak Forward Current (Maximum @ tp=10 ms, Tc=150 °C) | |
| Non-Repetitive Peak Forward Current (Maximum @ tp=10 ms, Tc=25 °C) | |
| Non-Repetitive Peak Forward Current (Maximum @ tp=10 µs, Tc=25 °C) | |
| Operating Temperature | |
| Operating and Storage Temperature Range | |
| Power Dissipation (@ TC = 25 °C) | |
| Repetitive Peak Reverse Voltage | |
| Reverse Current (Typical/Maximum @ 600 V, Tj=150 °C) | |
| Reverse Current (Typical/Maximum @ 600 V, Tj=25 °C) | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Soldering Temperature (Wave Soldering) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Time (tc) | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-Case | |
| Thermal Resistance, Junction-Ambient (Leaded) | |
| Total Capacitive Charge (Qc) | |
| Voltage |
The Infineon IDH08SG60CXKSA2 is a 3rd generation thinQ! Silicon Carbide (SiC) Schottky diode designed for high-efficiency fast-switching applications. It is rated for a repetitive peak reverse voltage of 600V and a continuous forward current of 8A at case temperatures up to 130°C. The diode exhibits a typical forward voltage of 1.8V at 8A and 25°C, and 2.2V at 150°C. It offers zero reverse recovery and zero forward recovery, enabling benchmark switching behavior with temperature-independent switching losses.
The device provides high surge current capability with a non-repetitive peak forward current of 42A (10ms pulse at 25°C) and an I²t rating of 9 A²s. The diode is dv/dt rugged to 50 V/ns. It is housed in a PG-TO220-2-1 package with through-hole mounting and Pb-free lead plating, RoHS compliant. The operating junction temperature range is -55°C to 175°C, with a junction-to-case thermal resistance of 1.5 K/W and maximum power dissipation of 100W at 25°C case temperature.
This SiC Schottky diode is optimized for high-temperature operation and is qualified according to JEDEC standards for target applications including switch-mode power supplies (SMPS), continuous conduction mode power factor correction (CCM PFC), motor drives, solar inverters, and uninterruptible power supplies (UPS).
| Qty | Low | High |
|---|---|---|
| 1+ | $5.62 | $5.62 |
| 10+ | $2.93 | $2.93 |
| 100+ | $2.67 | $2.67 |
| 500+ | $2.23 | $2.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive peak reverse voltage is 600V.
The continuous forward current is 8A at case temperatures up to 130°C.
No, it has zero reverse recovery and zero forward recovery, typical of SiC Schottky diodes.
The typical forward voltage is 1.8V at 8A and 25°C, and 2.2V at 8A and 150°C.
It is available in a PG-TO220-2-1 (TO-220-2) through-hole package.
The maximum operating junction temperature is 175°C.
The non-repetitive peak forward current is 42A for a 10ms sine halfwave at 25°C, and 350A for a 10µs pulse at 25°C.