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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,520 pcs
|
1520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
742 pcs
|
742 pcs | On Request | 1 | On Request | On Request | 1729+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage (Vf) | |
| Industrial Grade | |
| Mounting Type | |
| Operating Temperature | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The IDH08G65C6XKSA1 is a 650V, 20A Silicon Carbide (SiC) Schottky diode from Infineon's CoolSiC generation 6 family. It offers zero reverse recovery time (trr = 0 ns), eliminating switching losses associated with reverse recovery. The forward voltage is typically 1.35V at 8A and 25°C. The diode has a junction capacitance of 401 pF at 1V and 1 MHz. It is designed for high-efficiency power conversion applications such as power factor correction (PFC), solar inverters, and uninterruptible power supplies (UPS). The device is housed in a through-hole TO-220-2 package (PG-TO220-2) and can operate at junction temperatures up to 175°C. The SiC technology enables high dv/dt ruggedness (150 V/ns) and improved system efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.78 | $4.78 |
| 10+ | $2.46 | $2.46 |
| 100+ | $2.24 | $2.24 |
| 500+ | $1.83 | $1.83 |
| 1,000+ | $1.78 | $1.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
20A at TC ≤145°C.
1.35V max at 8A, 25°C.
No, it has zero reverse recovery time (0 ns) as a SiC Schottky diode.
TO-220-2 (PG-TO220-2).
-55°C to 175°C.
SiC (Silicon Carbide) Schottky.