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IDH08G65C6 The Infineon IDH08G65C6 is a 6th Generation CoolSiC™ 650V SiC Schottky Diode. It offers a best-in-class forward voltage of 1.25V and high dv/dt ruggedness.
Mfr Part #:

IDH08G65C6

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IDH08G65C6 is a 6th Generation CoolSiC™ 650V SiC Schottky Diode. It offers a best-in-class forward voltage of 1.25V and high dv/dt ruggedness.
✓ Total Stock: 1,140 pcs

IDH08G65C6 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
140 pcs
On Request
140 pcs On Request 1 On Request On Request 23+ On Request On Request
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IDH08G65C6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Energy
Forward Current
Forward Voltage
Lead Style
Package / Case
Reverse Voltage
SVHC Present
Tape & Reel
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IDH08G65C6 Description

Short technical summary and product information.

The Infineon IDH08G65C6 is a 6th Generation CoolSiC™ Schottky barrier diode featuring a 650V voltage rating. This diode utilizes Infineon's proprietary G6 technology, an enhancement of the G5 technology, incorporating advancements like a novel Schottky metal system. This results in improved efficiency across all load conditions due to a lower figure of merit (Qc x VF).

 

Key electrical characteristics include a maximum reverse voltage (VRRM) of 650V, a typical forward current (IF) of 8A at temperatures up to 145°C, and a typical forward voltage (VF) of 1.25V at 8A and 25°C. It also boasts high dv/dt ruggedness of 150 V/ns.

 

The CoolSiC™ Schottky diode 650 V G6 is designed to complement Infineon's 600V and 650V CoolMOS™ 7 families, meeting stringent application requirements. Potential applications include power factor correction in SMPS, solar inverters, and uninterruptible power supplies.

 

The component is supplied in a PG-TO220-2 package, suitable for industrial applications and qualified according to relevant JEDEC tests.

IDH08G65C6 Quick Information

Product Type: SiC Schottky Diode
Series: 6th Generation
Canonical Name: Infineon IDH08G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode
Subcategory: Schottky Diode

IDH08G65C6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IDH08G65C6 Features

  • 650V reverse voltage rating.
  • 8A maximum forward current.
  • 1.25V typical forward voltage.
  • High dv/dt ruggedness of 150 V/ns.
  • PG-TO220-2 package.

IDH08G65C6 Applications

  • Power factor correction boost circuits.
  • Switch-mode power supply rectification.
  • High-frequency DC-DC converter output stages.
  • Solar inverter freewheeling diodes.
  • EV charging station power modules.

IDH08G65C6 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the IDH08G65C6?

The maximum reverse voltage (VRRM) is 650 V.

What is the maximum forward current of the IDH08G65C6?

The maximum forward current (IF) is 8 A at a case temperature of 145 °C with a duty cycle of 1.

What is the typical forward voltage of the IDH08G65C6?

The typical forward voltage (VF) is 1.25 V at a forward current of 8 A and a junction temperature of 25 °C.

What package is the IDH08G65C6 available in?

The IDH08G65C6 is available in a PG-TO220-2 package.

What is the dv/dt ruggedness of the IDH08G65C6?

The minimum high dv/dt ruggedness is 150 V/ns.

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