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7,953 pcs
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7953 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IDH06SG60C is a 3rd Generation thinQ!™ SiC Schottky Diode, a high-performance component built with revolutionary Silicon Carbide material. This diode offers benchmark switching behavior that is independent of temperature, ensuring consistent operation across various conditions.
Key features include no reverse recovery and no forward recovery, contributing to its efficient operation. It also boasts a high surge current capability and an optimized design for high-temperature operation. The figure of merit is noted as the lowest QC/IF, indicating excellent performance characteristics.
Designed for fast switching applications, the IDH06SG60C is suitable for use in SMPS (e.g., CCM PFC), Motor Drives, Solar Applications, and UPS systems. Its Pb-free lead plating and RoHS compliance align with modern environmental standards.
The Infineon IDH06SG60C is a 3rd Generation thinQ!™ SiC Schottky Diode.
This diode is made from revolutionary Silicon Carbide material.
No, the IDH06SG60C has no reverse recovery.
No, the switching behavior of the IDH06SG60C is temperature independent.
The IDH06SG60C is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IDH06SG60C is 1 Unlimited.