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IDH06G65C6 The Infineon IDH06G65C6 is a 650V Silicon Carbide (SiC) Schottky diode from the 6th generation CoolSiC™ family. It offers a best-in-class forward voltage of 1.25V and high dv/dt ruggedness.
Mfr Part #:

IDH06G65C6

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IDH06G65C6 is a 650V Silicon Carbide (SiC) Schottky diode from the 6th generation CoolSiC™ family. It offers a best-in-class forward voltage of 1.25V and high dv/dt ruggedness.
✓ Total Stock: 782 pcs

IDH06G65C6 Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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782 pcs
On Request
782 pcs On Request 1 On Request On Request 23+ On Request On Request
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IDH06G65C6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Energy
Forward Current
Lead Style
Mounting Type
Package / Case
Reverse Voltage
SVHC Present
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IDH06G65C6 Description

Short technical summary and product information.

The Infineon IDH06G65C6 is a 6th Generation CoolSiC™ 650V SiC Schottky Diode. This diode utilizes Infineon's proprietary G6 technology, enhanced with advancements like a novel Schottky metal system, resulting in improved efficiency across all load conditions due to a lower figure of merit (Qc x VF).

 

Key electrical characteristics include a maximum reverse voltage (VRRM) of 650V, a typical forward voltage (VF) of 1.25V at 6A and 25°C, and a typical charge (QC) of 9.6nC at 400V. It also features high dv/dt ruggedness of 150 V/ns.

 

Designed to complement 600V and 650V CoolMOS™ 7 families, the IDH06G65C6 meets stringent application requirements. Potential applications include power factor correction in SMPS, solar inverters, and uninterruptible power supplies.

 

The diode is housed in a PG-TO220-2 package, suitable for through-hole mounting. It is qualified for industrial applications according to relevant JEDEC tests.

IDH06G65C6 Quick Information

Product Type: SiC Schottky Diode
Series: 6th Generation
Canonical Name: Infineon IDH06G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode
Subcategory: Silicon Carbide (SiC)

IDH06G65C6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IDH06G65C6 Features

  • Best in class forward voltage.
  • Best in class figure of merit.
  • High dv/dt ruggedness.
  • 650V reverse voltage rating.
  • PG-TO220-2 package.

IDH06G65C6 Applications

  • Used in high-frequency power supply circuits.
  • Ideal for power factor correction (PFC) stages.
  • Suitable for solar inverter and UPS systems.
  • Applicable in electric vehicle charging infrastructure.

IDH06G65C6 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage of the IDH06G65C6?

The maximum reverse voltage (VRRM) is 650V.

What is the forward current rating of the IDH06G65C6?

The nominal forward current is 6A at a case temperature of 145°C with a duty cycle of 1.

What is the typical forward voltage of the IDH06G65C6?

The typical forward voltage is 1.25V at a forward current of 6A and a junction temperature of 25°C.

What package does the IDH06G65C6 come in?

The device is available in a PG-TO220-2 package with through-hole mounting.

What is the dv/dt ruggedness of the IDH06G65C6?

The typical dv/dt ruggedness is 150V/ns.

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