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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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194 pcs
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194 pcs | On Request | 1 | On Request | On Request | 0035+ | On Request | On Request |
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The IDH03SG60C is a silicon carbide (SiC) Schottky diode manufactured by Infineon Technologies. It is designed for high-efficiency power conversion applications, offering a maximum reverse voltage of 600V and an average rectified forward current of 3A. The diode exhibits a maximum forward voltage of 2.3V at 3A, and its zero reverse recovery time (trr = 0 ns) enables fast switching with minimal losses.
This diode operates over a junction temperature range of -55°C to 175°C, making it suitable for demanding thermal environments. The device is available in a TO-220-2 through-hole package (supplier device package PG-TO220-2-2), which facilitates easy mounting on printed circuit boards. The capacitance is 60pF at 1V and 1MHz, contributing to predictable high-frequency behavior.
Typical applications include power factor correction, switch-mode power supplies, and other power switching circuits where efficiency and reliability are critical. The SiC technology provides superior switching performance compared to conventional silicon diodes, reducing switching losses and improving overall system efficiency.
The maximum reverse voltage is 600V.
The average rectified forward current is 3A.
The maximum forward voltage is 2.3V at a forward current of 3A.
The reverse recovery time is 0 ns, indicating no recovery time.
It is available in a TO-220-2 through-hole package (supplier device package PG-TO220-2-2).