IDDD16G65C6XTMA1 Infineon IDDD16G65C6XTMA1 is a 650V 16A SiC Schottky diode in a PG-HDSOP-10-1 surface mount package. It features zero reverse recovery time and a forward voltage of 1.25V.
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IDDD16G65C6XTMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IDDD16G65C6XTMA1 is a 650V 16A SiC Schottky diode in a PG-HDSOP-10-1 surface mount package. It features zero reverse recovery time and a forward voltage of 1.25V.
Total Stock: 6,120 pcs
$ Price Range: $3.47 - $7.88

IDDD16G65C6XTMA1 Available from 1 distributor

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IDDD16G65C6XTMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Capacitance @ Vr, F
Current
Forward Voltage (Vf) (Max) @ If
If (Maximum @ Tc ≤ 160 °C, D = 1)
Industrial Grade
Mounting Type
Operating Temperature
Recovery Energy (Ec)
Reverse Recovery Time (trr)
Speed
Stored Charge (Qc)
Supplier Device Package
Tape & Reel
Technology
Voltage
dV/dt Ruggedness

IDDD16G65C6XTMA1 Description

Short technical summary and product information.

The Infineon IDDD16G65C6XTMA1 is a 6th generation CoolSiC™ 650V silicon carbide Schottky diode. It delivers a forward current rating of 16A (average rectified) with a maximum forward voltage of 1.25V at 16A and 25°C. The diode offers zero reverse recovery time (trr = 0 ns), significantly reducing switching losses in high-frequency applications.

 

Key electrical parameters include a stored charge (Qc) of 21.5 nC and recovery energy (Ec) of 4.3 µJ at 400V. The device is rated for a junction temperature range of -55°C to 175°C and exhibits high dv/dt ruggedness of 150 V/ns. It is housed in a 10-PowerSOP Module (PG-HDSOP-10-1) with surface mount terminals.

 

This diode is designed for power conversion systems requiring high efficiency and reliability, such as power factor correction (PFC) circuits, solar inverters, and uninterruptible power supplies. The SiC Schottky technology eliminates reverse recovery losses, enabling higher switching frequencies and improved power density.

IDDD16G65C6XTMA1 Quick Information

Product Type: SiC Schottky Diode
Series: 6th Generation CoolSiC
Canonical Name: Infineon Technologies IDDD16G65C6XTMA1 650V 16A SiC Schottky Diode in PG-HDSOP-10-1 Package
Subcategory: 650V Schottky Diodes

IDDD16G65C6XTMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IDDD16G65C6XTMA1 Estimated Pricing

Qty Low High
1+ $7.88 $7.88
10+ $5.34 $5.34
100+ $3.89 $3.89
500+ $3.72 $3.72
1,000+ $3.47 $3.47
1,700+ $3.47 $3.47

Estimated market price range - modelled values for guidance only, not live distributor offers.

IDDD16G65C6XTMA1 Features

  • 650V maximum reverse voltage rating.
  • 16A average rectified forward current.
  • 1.25V maximum forward voltage at 16A.
  • Zero reverse recovery time (SiC Schottky).
  • 150 V/ns dv/dt ruggedness rating.

IDDD16G65C6XTMA1 Applications

  • Power factor correction in SMPS.
  • Solar inverter circuits.
  • Uninterruptible power supply designs.
  • High-frequency power conversion systems.

IDDD16G65C6XTMA1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage (Vrrm) of IDDD16G65C6XTMA1?

The maximum reverse voltage is 650 V.

What is the forward voltage drop at rated current?

The maximum forward voltage is 1.25 V at 16 A and 25°C junction temperature.

Does this diode have reverse recovery time?

No, as a SiC Schottky diode it has zero reverse recovery time (trr = 0 ns).

What is the operating junction temperature range?

The junction temperature range is -55°C to 175°C.

What package is this diode available in?

It is in a 10-PowerSOP Module with supplier device package PG-HDSOP-10-1.

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