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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,120 pcs
|
6120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Capacitance @ Vr, F | |
| Current | |
| Forward Voltage (Vf) (Max) @ If | |
| If (Maximum @ Tc ≤ 160 °C, D = 1) | |
| Industrial Grade | |
| Mounting Type | |
| Operating Temperature | |
| Recovery Energy (Ec) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Stored Charge (Qc) | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage | |
| dV/dt Ruggedness |
The Infineon IDDD16G65C6XTMA1 is a 6th generation CoolSiC™ 650V silicon carbide Schottky diode. It delivers a forward current rating of 16A (average rectified) with a maximum forward voltage of 1.25V at 16A and 25°C. The diode offers zero reverse recovery time (trr = 0 ns), significantly reducing switching losses in high-frequency applications.
Key electrical parameters include a stored charge (Qc) of 21.5 nC and recovery energy (Ec) of 4.3 µJ at 400V. The device is rated for a junction temperature range of -55°C to 175°C and exhibits high dv/dt ruggedness of 150 V/ns. It is housed in a 10-PowerSOP Module (PG-HDSOP-10-1) with surface mount terminals.
This diode is designed for power conversion systems requiring high efficiency and reliability, such as power factor correction (PFC) circuits, solar inverters, and uninterruptible power supplies. The SiC Schottky technology eliminates reverse recovery losses, enabling higher switching frequencies and improved power density.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.88 | $7.88 |
| 10+ | $5.34 | $5.34 |
| 100+ | $3.89 | $3.89 |
| 500+ | $3.72 | $3.72 |
| 1,000+ | $3.47 | $3.47 |
| 1,700+ | $3.47 | $3.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage is 650 V.
The maximum forward voltage is 1.25 V at 16 A and 25°C junction temperature.
No, as a SiC Schottky diode it has zero reverse recovery time (trr = 0 ns).
The junction temperature range is -55°C to 175°C.
It is in a 10-PowerSOP Module with supplier device package PG-HDSOP-10-1.