| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
213 pcs
|
213 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
19 pcs
|
19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Forward Current | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Tape & Reel | |
| Thermal Resistance |
The Infineon IDD04SG60C is a high-performance Silicon Carbide (SiC) Schottky diode from the thinQ! 3rd Generation series. Utilizing revolutionary SiC semiconductor material, this diode offers benchmark switching behavior with no reverse or forward recovery.
Key electrical specifications include a 600V repetitive peak reverse voltage (VRRM) and a continuous forward current (IF) of 4A at a case temperature below 130°C. It exhibits a typical forward voltage (VF) of 2.1V at 4A and 25°C, and a low reverse current (IR) of 0.3µA at 600V and 25°C. The diode boasts a total capacitive charge (QC) of 4.5 nC and a switching time (tc) of less than 10 ns.
Designed for demanding applications, the IDD04SG60C is optimized for high temperature operation and features high surge current capability. Its temperature-independent switching behavior and low figure of merit make it suitable for fast switching applications such as Switched-Mode Power Supplies (SMPS) including CCM PFC, motor drives, solar applications, and Uninterruptible Power Supplies (UPS).
The component is housed in a PG-TO252-3 surface-mount package. It is Pb-free and RoHS compliant, qualified according to JEDEC standards for target applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive peak reverse voltage (VRRM) is 600 V.
The continuous forward current (IF) is 4 A at a case temperature below 130°C.
The typical diode forward voltage (VF) is 2.1 V at 4A and 25°C.
The typical reverse current (IR) is 0.3 µA at 600V and 25°C.
The switching time (tc) is less than 10 ns.
The package type is PG-TO252-3.
The operating and storage temperature range is -55 to 175°C.