IDB30E120ATMA1 The IDB30E120ATMA1 is a 1200V, 50A fast switching emitter controlled diode from Infineon Technologies. It features low forward voltage and soft recovery.
Mfr Part #:

IDB30E120ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IDB30E120ATMA1 is a 1200V, 50A fast switching emitter controlled diode from Infineon Technologies. It features low forward voltage and soft recovery.
Total Stock: 4,020 pcs
$ Price Range: $0.68 - $2.41

IDB30E120ATMA1 Available from 1 distributor

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IDB30E120ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
IF (Nominal @ Tc=90 °C)
Mounting Type
Operating Temperature
Peak Reverse Recovery Current (Tj=25°C)
Repetitive Peak Reverse Voltage
Reverse Recovery Time (trr)
Speed
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
VF (Typical @ IF = 30 A, TJ = 25 °C)
Voltage
trr (Typical @ VR=800 V, IF=30 A, dIF/dt=850 A/µs, Tj=125 °C)
trr (Typical @ VR=800 V, IF=30 A, dIF/dt=850 A/µs, Tj=150 °C)

IDB30E120ATMA1 Description

Short technical summary and product information.

The IDB30E120ATMA1 is a fast switching emitter controlled diode manufactured by Infineon Technologies. It is rated for a repetitive peak reverse voltage of 1200 V and a continuous forward current of 50 A at a case temperature of 25°C, derating to 30 A at 90°C. The typical forward voltage drop is 1.65 V at 30 A and 25°C junction temperature.

 

This diode exhibits fast and soft switching characteristics, with a typical reverse recovery time of 243 ns at 25°C under specified test conditions. The reverse recovery time increases to 380 ns at 150°C. The peak reverse recovery current is typically 23.7 A at 25°C. The device is designed for easy paralleling and low reverse recovery charge.

 

The IDB30E120ATMA1 is housed in a PG-TO263-3-2 package, suitable for surface mount assembly. The operating junction temperature range is -55°C to +150°C.

IDB30E120ATMA1 Quick Information

Product Type: Fast Switching Diode
Canonical Name: IDB30E120ATMA1 Fast Switching Emitter Controlled Diode
Subcategory: Rectifier Diode

IDB30E120ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Compliant

IDB30E120ATMA1 Estimated Pricing

Qty Low High
1+ $2.41 $2.41
10+ $1.54 $1.54
100+ $1.04 $1.04
500+ $0.83 $0.83
1,000+ $0.68 $0.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

IDB30E120ATMA1 Features

  • 1200V repetitive peak reverse voltage rating.
  • 50A continuous forward current at 25°C.
  • Low forward voltage drop of 1.65V typical.
  • Fast reverse recovery time of 243ns typical.
  • Soft switching and easy paralleling design.

IDB30E120ATMA1 Applications

  • Suitable for power factor correction circuits.
  • Used in switch mode power supplies.
  • Ideal for freewheeling diode applications.
  • Applicable in motor drive inverters.

IDB30E120ATMA1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum repetitive peak reverse voltage of the IDB30E120ATMA1?

The maximum repetitive peak reverse voltage (VRRM) is 1200 V.

What is the continuous forward current rating of the IDB30E120ATMA1?

The continuous forward current (IF) is 50 A at a case temperature of 25°C, and 30 A at 90°C.

What is the typical forward voltage drop of the IDB30E120ATMA1?

The typical forward voltage drop (VF) is 1.65 V at a forward current of 30 A and junction temperature of 25°C.

What is the reverse recovery time of the IDB30E120ATMA1?

The typical reverse recovery time (trr) is 243 ns at 25°C, 355 ns at 125°C, and 380 ns at 150°C, under test conditions of VR=800V, IF=30A, and dIF/dt=850A/µs.

What package is the IDB30E120ATMA1 available in?

The IDB30E120ATMA1 is available in a PG-TO263-3-2 package.

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