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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,656 pcs
|
8656 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance @ Vr, F | |
| Current | |
| Current - Average Rectified (Io) | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (PD) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance, Junction - Case (RθJC) | |
| Total Capacitive Charge (Qc) | |
| Voltage | |
| Voltage - DC Reverse (Vr) (Max) |
The Infineon IDB10S60C is a 2nd generation thinQ! silicon carbide (SiC) Schottky diode designed for high-efficiency power conversion. It offers a repetitive peak reverse voltage of 600V and a continuous forward current of 10A at case temperatures up to 135°C. The diode exhibits zero reverse recovery time (trr = 0 ns) due to its Schottky barrier technology, enabling high-frequency switching with minimal losses.
Typical forward voltage is 1.5V at 10A and 25°C, with a maximum of 1.7V. Total capacitive charge is 24 nC, and the device can handle surge currents up to 76A (10 ms sine halfwave). The junction-to-case thermal resistance is 1.8 K/W, and maximum power dissipation is 83W at 25°C case temperature.
The IDB10S60C is housed in a PG-TO263-3-2 (D2PAK) surface-mount package and is qualified according to JEDEC standards. It is RoHS3 compliant and Pb-free, with an MSL rating of 1 (unlimited). Operating temperature range is -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $4.42 | $4.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The repetitive peak reverse voltage (V_RRM) is 600V.
The continuous forward current (I_F) is 10A at case temperature up to 135°C.
No, the IDB10S60C is a SiC Schottky diode with zero reverse recovery time (trr = 0 ns).
Typical forward voltage is 1.5V at 10A and 25°C, with a maximum of 1.7V.
The IDB10S60C is offered in a PG-TO263-3-2 (D2PAK) surface-mount package.
The operating temperature range is -55°C to 175°C.
Yes, the IDB10S60C is RoHS3 compliant and Pb-free.