| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
94 pcs
|
94 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time | |
| SVHC Present |
The IAUZ40N10S5N130 from Infineon is an N-channel enhancement mode power MOSFET belonging to the OptiMOS™-5 family, specifically designed for demanding automotive applications. This component is AEC Q101 qualified, ensuring reliability under stringent conditions.
Key electrical characteristics include a drain-source breakdown voltage of 100V and a maximum continuous drain current of 40A at 25°C case temperature. The device exhibits a low on-state resistance, with a typical value of 10.8 mΩ at VGS=10V and ID=20A, and 14 mΩ at VGS=6V and ID=10A. Dynamic characteristics such as input capacitance (Ciss) are up to 1525 pF, and output capacitance (Coss) up to 256 pF.
This MOSFET operates within a temperature range of -55°C to +175°C and has a power dissipation of 68W at 25°C. It is supplied in a PG-TSDSON-8-33 package suitable for surface mounting. The device is also 100% avalanche tested and features a green product designation, indicating RoHS compliance.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The typical gate threshold voltage is 3.0V.
The maximum continuous drain current is 40A.
The typical on-state resistance is 10.8 mΩ at 10V/20A.
The operating temperature range is -55°C to +175°C.
This MOSFET is supplied in a PG-TSDSON-8-33 package.
Yes, this component is RoHS3 Compliant.