| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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77 pcs
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77 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IAUZ40N06S5N050 is a high-performance N-channel power MOSFET from the OptiMOS™-5 family, specifically engineered for demanding automotive applications. This device features a drain-source breakdown voltage of 60V and a continuous drain current rating of 40A.
Key electrical characteristics include a low on-state resistance, with typical values of 5 mΩ at VGS=7V, ID=10A and 4 mΩ at VGS=10V, ID=20A. The MOSFET operates with a gate threshold voltage typically around 2.8V. Dynamic characteristics such as input capacitance (Ciss) are typically 1692 pF, output capacitance (Coss) at 373 pF, and reverse transfer capacitance (Crss) at 18 pF.
Designed for reliability, it operates at temperatures up to 175°C and has a junction-to-case thermal resistance of 2.1 K/W. The device is supplied in a PG-TSDSON-8-33 package, suitable for surface mounting.
This MOSFET is 100% avalanche tested and is RoHS compliant, making it a suitable choice for various automotive power management systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The typical gate threshold voltage is 2.8V.
The maximum continuous drain current is 40A.
The typical on-state resistance is 4 mΩ.
The operating temperature range is -55°C to +175°C.
The package type is PG-TSDSON-8-33.