| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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185 pcs
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185 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IAUZ18N10S5L420 is an N-channel OptiMOS™-5 power MOSFET suitable for automotive applications. It features a high drain-source breakdown voltage of 100V and a continuous drain current of 18A at 25°C case temperature.
Key electrical characteristics include a gate threshold voltage ranging from 1.2V to 2.2V and a low drain-source on-state resistance, with a maximum of 42 mΩ at VGS=10V and ID=9A. Dynamic characteristics such as input capacitance (Ciss) are typically 470pF, and output capacitance (Coss) is typically 88pF.
This MOSFET operates within a temperature range of -55°C to +175°C and has a power dissipation of 30W at 25°C case temperature. It is supplied in a PG-TSDSON-8 package suitable for surface mounting.
The IAUZ18N10S5L420 is AEC Q101 qualified, MSL1 rated, and features 100% avalanche testing, making it a reliable choice for demanding automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 18A at 25°C case temperature.
The drain-source breakdown voltage is 100V.
The typical gate threshold voltage is 1.7V.
The operating temperature range is -55°C to +175°C.
It is supplied in a PG-TSDSON-8 package.
Yes, the IAUZ18N10S5L420 is AEC Q101 qualified.
The Moisture Sensitivity Level is 1 Unlimited.