| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12 pcs
|
12 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IAUT300N10S5N015ATMA1 is an N-channel enhancement mode power MOSFET from Infineon Technologies, part of the OptiMOS-5 family. It is designed for high-current switching applications, offering a drain-source breakdown voltage of 100V and a continuous drain current of 300A at 25°C case temperature. The device features an ultra-low on-state resistance of 1.5mΩ maximum at V_GS=10V, enabling high efficiency and reduced conduction losses.
This MOSFET is AEC qualified and supports an operating junction temperature range of -55°C to 175°C, making it suitable for demanding automotive and industrial environments. It is RoHS compliant and rated MSL1 for unlimited floor life with peak reflow temperatures up to 260°C. The device is 100% avalanche tested, with a single-pulse avalanche energy rating of 652mJ.
The IAUT300N10S5N015ATMA1 is offered in a surface-mount 8-PowerSFN package (supplier device package PG-HSOF-8-1). With a maximum power dissipation of 375W and low thermal resistance (0.4 K/W junction-to-case), it is well-suited for high-power density designs. The device also features fast switching times (turn-on delay 29ns, rise time 15ns) and low gate charge (216nC total), supporting efficient high-frequency operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.26 | $6.26 |
| 10+ | $4.19 | $4.19 |
| 100+ | $3.02 | $3.02 |
| 500+ | $2.92 | $2.92 |
| 1,000+ | $2.82 | $2.82 |
| 2,000+ | $2.59 | $2.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 100V (minimum, at V_GS=0V, I_D=1mA).
The continuous drain current is 300A at T_C=25°C and 247A at T_C=100°C, with V_GS=10V.
The on-state resistance is 1.3mΩ typical and 1.5mΩ maximum at V_GS=10V, I_D=100A. At V_GS=6V, I_D=75A, it is 1.6mΩ typical and 2.0mΩ maximum.
The operating junction temperature range is -55°C to 175°C.
Yes, the device is RoHS compliant (green product) as verified in the datasheet.
The device is available in an 8-PowerSFN surface-mount package, with supplier device package PG-HSOF-8-1.
The maximum power dissipation is 375W at T_C=25°C.