| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
125 pcs
|
125 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade |
The Infineon IAUT260N10S5N019ATMA1 is a high-performance Automotive MOSFET suitable for demanding power management tasks. This component is engineered to handle a continuous drain current of up to 260 A, making it ideal for applications requiring significant power throughput.
With a typical ON resistance of just 5 mOhm at a gate-source voltage of 10 V and a drain current of 260 A, this MOSFET minimizes power loss and improves efficiency. Its design is optimized for automotive environments, ensuring reliability and performance under various operating conditions.
The IAUT260N10S5N019ATMA1 is supplied in the PG-HSOF-8-1 package, which is designed for efficient thermal management and robust mounting. This package type is crucial for dissipating heat generated during high-power operation, ensuring the longevity and stability of the component.
This MOSFET is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1, indicating its suitability for a wide range of manufacturing processes. Its REACH status is unaffected, further simplifying integration into global supply chains.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.90 | $5.90 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical ON resistance is 5 mOhm when VGS is 10 V and ID is 260 A.
The component can handle up to 260 A of continuous drain current.
It is supplied in the PG-HSOF-8-1 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.