| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,080 pcs
|
2080 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Operating Temperature | |
| Power Dissipation | |
| Reverse Recovery Time | |
| SVHC Present |
The Infineon IAUT260N10S5N019 is an N-channel enhancement mode power MOSFET from the OptiMOS™-5 family, qualified for automotive applications (AEC-Q101). It features a high continuous drain current capability of 260A at 25°C case temperature and a low drain-source on-state resistance as low as 1.9 mΩ at VGS=10V, ID=100A.
This MOSFET operates with a gate source voltage range of ±20V and has a drain-source breakdown voltage of 100V. The device is designed for high-temperature operation up to 175°C and has a power dissipation of 300W at 25°C case temperature. It is supplied in the PG-HSOF-8-1 package.
Key electrical characteristics include input capacitance up to 11830pF, output capacitance up to 1900pF, and reverse transfer capacitance up to 92pF. Dynamic characteristics such as turn-on delay time are 21ns, rise time is 11ns, turn-off delay time is 49ns, and fall time is 38ns. The gate charge characteristics include a total gate charge of up to 166nC.
The IAUT260N10S5N019 also includes an integrated reverse diode with a continuous forward current of 260A and a pulse current of 1040A. The diode forward voltage is typically 0.9V at 100A. This MOSFET is suitable for various automotive power management applications requiring high current handling and efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100 V minimum at VGS=0V and ID=1mA.
The continuous drain current is 260 A at TC=25°C and VGS=10V.
The maximum on-state resistance is 1.9 mΩ at VGS=10V and ID=100A.
The operating junction temperature range is -55°C to +175°C.
It is available in a PG-HSOF-8-1 package.
The total gate charge is 128 nC typical and 166 nC maximum.
The power dissipation is 300 W at TC=25°C.