| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,837 pcs
|
1837 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Input Capacitance | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time | |
| SVHC Present |
The Infineon IAUT150N10S5N035 is an N-channel OptiMOS™-5 Power MOSFET, qualified to AEC-Q101 standards for automotive use. This device offers a high continuous drain current of 150A at 25°C case temperature and a drain-source breakdown voltage of 100V.
Key electrical characteristics include a low drain-source on-state resistance as low as 3.0 mΩ at VGS=10V and ID=75A. The MOSFET operates with a gate source voltage range of ±20V and features a maximum power dissipation of 166W at 25°C case temperature.
With an operating temperature range from -55°C to +175°C, the IAUT150N10S5N035 is suitable for demanding environments. It is supplied in a PG-HSOF-8-1 package, designed for surface mounting.
This component is RoHS compliant and features ultra-low Rds(on) and 100% avalanche tested, making it a reliable choice for power switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The typical gate threshold voltage is 3.0V.
The maximum continuous drain current is 150A at 25°C case temperature.
The typical drain-source on-state resistance is 3.0mΩ at 75A and 10V gate-source voltage.
The operating and storage temperature range is -55°C to +175°C.
The component is supplied in a PG-HSOF-8-1 package.
Yes, this MOSFET is AEC-Q101 qualified.