IAUS300N08S5N012ATMA1 N-Channel MOSFET from Infineon Technologies with 80V drain-source breakdown voltage and 300A continuous drain current. Features ultra-low on-resistance of 1.2mOhm at 10V gate drive.
Mfr Part #:

IAUS300N08S5N012ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 80V drain-source breakdown voltage and 300A continuous drain current. Features ultra-low on-resistance of 1.2mOhm at 10V gate drive.
✓ Total Stock: 177 pcs
$ Price Range: $2.80 - $6.65

IAUS300N08S5N012ATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
177 pcs
177 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

IAUS300N08S5N012ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IAUS300N08S5N012ATMA1 Description

Short technical summary and product information.

Infineon IAUS300N08S5N012ATMA1 is an N-channel enhancement mode MOSFET from the OptiMOS-5 family. It is designed for high current applications with a drain-source breakdown voltage of 80V and continuous drain current rating of 300A at 25°C case temperature.

 

Key electrical characteristics: Ultra-low drain-source on-state resistance of 1.2mOhm maximum at VGS=10V, ID=100A. Gate threshold voltage range 2.2V to 3.8V. Total gate charge 231nC maximum. Input capacitance 16250pF. Fast switching with turn-on delay 31ns, rise time 19ns, turn-off delay 69ns, fall time 55ns.

 

Package and thermal: Surface mount package PG-HSOG-8-1 (8-PowerSMD, Gull Wing). Maximum power dissipation 375W at 25°C case temperature. Thermal resistance junction-to-case 0.4K/W. Operating temperature range -55°C to 175°C. MSL1 up to 260°C peak reflow. RoHS compliant and AEC qualified.

 

Applications: Suitable for high current switching, automotive systems, power management, and DC-DC converters. The device is 100% avalanche tested with single pulse avalanche energy rating of 817mJ.

IAUS300N08S5N012ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS-5
Canonical Name: Infineon Technologies IAUS300N08S5N012ATMA1 N-Channel MOSFET, 80V, 300A, PG-HSOG-8-1
Subcategory: N-Channel MOSFET

IAUS300N08S5N012ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IAUS300N08S5N012ATMA1 Estimated Pricing

Qty Low High
1+ $6.65 $6.65
10+ $4.47 $4.47
100+ $3.23 $3.23
500+ $3.00 $3.00
1,000+ $2.80 $2.80
1,800+ $2.80 $2.80

Estimated market price range - modelled values for guidance only, not live distributor offers.

IAUS300N08S5N012ATMA1 Features

  • Ultra-low on-resistance of 1.2 milliohms.
  • High continuous drain current of 300A.
  • AEC qualified for automotive applications.
  • RoHS compliant and MSL1 rated.
  • 100% avalanche tested for reliability.

IAUS300N08S5N012ATMA1 Applications

  • Ideal for high current power switching.
  • Used in automotive engine control modules.
  • Suitable for DC-DC converter designs.
  • Perfect for battery management systems.

IAUS300N08S5N012ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IAUS300N08S5N012ATMA1?

The drain-source breakdown voltage is 80V minimum at VGS=0V, ID=1mA.

What package does the IAUS300N08S5N012ATMA1 come in?

It comes in a surface mount PG-HSOG-8-1 package (8-PowerSMD, Gull Wing).

What is the operating temperature range of this MOSFET?

The operating temperature range is -55°C to 175°C (junction temperature).

Is the IAUS300N08S5N012ATMA1 RoHS compliant?

Yes, it is RoHS3 compliant as stated in the datasheet.

What is the gate threshold voltage range?

The gate threshold voltage is 2.2V minimum, 3V typical, and 3.8V maximum at VDS=VGS, ID=275µA.

What is the maximum continuous drain current?

The maximum continuous drain current is 300A at TC=25°C with VGS=10V.

What is the typical on-resistance at 10V gate drive?

The typical on-resistance is 1.0mOhm, with a maximum of 1.2mOhm at VGS=10V, ID=100A.

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