| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IAUC90N10S5N062 is an N-channel enhancement mode power MOSFET specifically designed for automotive applications. It is AEC Q101 qualified, ensuring reliability in demanding environments.
Key electrical specifications include a drain-source breakdown voltage of 100V and a continuous drain current of up to 90A at 25°C case temperature with a 10V gate-source voltage. The on-state resistance is as low as 6.2mΩ at VGS=10V and ID=45A. Dynamic characteristics include input capacitance of 2519pF and output capacitance of 403pF.
This MOSFET features a power dissipation of 115W at 25°C and operates within a temperature range of -55°C to +175°C. It is housed in a PG-TDSON-8 package, suitable for surface mounting.
Additional features include 100% avalanche tested and compliance with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The typical gate threshold voltage is 3V.
The continuous drain current at 25°C is 90A.
The typical on-state resistance at 10V gate voltage is 5.2mΩ.
The package type is PG-TDSON-8.
The operating and storage temperature range is -55°C to +175°C.