| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,487 pcs
|
1487 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Operating Temperature | |
| Power Dissipation | |
| Reverse Recovery Time | |
| SVHC Present |
The Infineon IAUC80N04S6L032 is a high-performance N-channel power MOSFET from the OptiMOS™- 6 series, specifically engineered for demanding automotive applications. This logic-level device features a drain-source breakdown voltage of 40V and boasts a low maximum on-state resistance of 3.2 mΩ at a gate-source voltage of 10V and 40A drain current.
With a continuous drain current rating of 80A at 25°C case temperature and 66A at 100°C, this MOSFET is suitable for power management tasks. It operates reliably across a wide temperature range from -55°C to +175°C and is AEC Q101 qualified, ensuring robustness and suitability for automotive environments. The device is packaged in a PG-TDSON-8 package.
Key electrical characteristics include a gate threshold voltage typically around 1.6V, input capacitance up to 1515pF, and output capacitance up to 429pF. Dynamic characteristics such as turn-on delay time are typically 3ns, and fall time is typically 5ns, enabling efficient switching performance. The integrated diode provides a continuous forward current of 80A.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The maximum on-state resistance is 4.60 mΩ at VGS=4.5V, ID=40A, and 3.29 mΩ at VGS=10V, ID=40A.
The continuous drain current is 80A at 25°C case temperature and 66A at 100°C case temperature.
The operating and storage temperature range is -55°C to +175°C.
This MOSFET is supplied in a PG-TDSON-8 package.
Yes, this MOSFET is AEC Q101 qualified.