Mfr Part #:

IAUC70N08S5N074

Mfr Name: Infineon

The IAUC70N08S5N074 is an N-channel power MOSFET featuring an 80V breakdown voltage and 70A continuous drain current. It offers low on-state resistance of 6.6mΩ at 10V gate drive for efficient power switching.

✓ Total Stock: 3,593 pcs

$ Price Range: $2.40

IAUC70N08S5N074 Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	3,593 pcs On Request	3593 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IAUC70N08S5N074 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
AEC Qualified	Yes
Automotive Grade	Yes
Operating Temperature	175°C
Power Dissipation	83 W
Reverse Recovery Time	40 ns
SVHC Present	Not Present

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IAUC70N08S5N074 Description

Short technical summary and product information.

The IAUC70N08S5N074 is an N-channel enhancement mode power MOSFET manufactured by Infineon. Designed for high-efficiency power conversion applications, this device delivers a drain-source breakdown voltage of 80V and supports a continuous drain current of 70A at 25°C case temperature. The typical on-state resistance is rated at 6.6mΩ when driven with a 10V gate-source voltage, ensuring minimal conduction losses during operation.

This component integrates a robust body diode capable of handling 70A continuous forward current and 280A pulsed current. Key switching characteristics include a total gate charge of 23nC typical and fast reverse recovery time of 40ns, making it suitable for high-frequency DC-DC converters and motor control circuits. The device operates reliably across a junction temperature range of -55°C to +175°C and features a thermal resistance junction-to-case of 1.8K/W maximum.

Packaged in a compact PG-TDSON-8 footprint, the IAUC70N08S5N074 facilitates automated surface-mount assembly while providing adequate thermal dissipation up to 83W under ideal conditions. Engineers can leverage its low input capacitance of 1600pF and optimized gate plateau voltage of 4.9V for precise driver interface matching.

IAUC70N08S5N074 Quick Information

Product Type: N-channel Power MOSFET

Series: IAUC

Canonical Name: Infineon IAUC70N08S5N074 N-channel Power MOSFET

IAUC70N08S5N074 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IAUC70N08S5N074 Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IAUC70N08S5N074 Features

80V drain-source breakdown voltage rating.
6.6mΩ typical on-state resistance at 10V drive.
70A continuous drain current capability at 25°C.
Fast 40ns reverse recovery time for body diode.
PG-TDSON-8 surface mount package for compact designs.

IAUC70N08S5N074 Applications

High-efficiency DC-DC converter power stages.
Motor drive and inverter bridge circuits.
Synchronous rectification in server power supplies.
Automotive battery management system switches.

IAUC70N08S5N074 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source breakdown voltage?

80 V.

Which package type is used for this component?

PG-TDSON-8.

What is the operating temperature range?

-55 °C to +175 °C.

What is the typical on-state resistance at 10V gate drive?

6.6 mΩ.

How much total gate charge does the device require?

23 nC typical.

What is the continuous forward current rating of the integrated body diode?

70 A.