Mfr Part #:

IAUC60N04S6N044

Mfr Name: Infineon

The Infineon IAUC60N04S6N044 is an N-channel OptiMOS™- 6 power MOSFET designed for automotive applications. It offers a 40V drain-source breakdown voltage and a continuous drain current of up to 60A.

✓ Total Stock: 2,000 pcs

$ Price Range: $2.40

IAUC60N04S6N044 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	2,000 pcs On Request	2000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IAUC60N04S6N044 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Mounting Type	Surface Mount
Operating Temperature	-55 °C / 175 °C
Power Dissipation	42 W
Reverse Recovery Time	21 ns
SVHC Present	Not Present

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IAUC60N04S6N044 Description

Short technical summary and product information.

The Infineon IAUC60N04S6N044 is a high-performance N-channel power MOSFET from the OptiMOS™- 6 family, specifically engineered for demanding automotive applications. This device features a drain-source breakdown voltage of 40V and can handle a continuous drain current of up to 60A at 25°C case temperature.

Key electrical characteristics include a low typical on-state resistance of 3.53 mΩ at VGS=10V and ID=30A, contributing to efficient power delivery. The MOSFET operates with a gate threshold voltage typically around 2.6V and supports a wide operating temperature range from -55°C to +175°C.

Packaged in a PG-TDSON-8 surface-mount package, the IAUC60N04S6N044 is suitable for various power management tasks. It is AEC Q101 qualified, ensuring reliability in automotive environments. The device also boasts a green product designation, indicating RoHS compliance.

This power transistor is 100% avalanche tested, providing an additional layer of robustness for applications that may experience transient voltage spikes. Its thermal resistance characteristics, such as a junction-to-case thermal resistance of 3.6 K/W, are important considerations for thermal management in system design.

IAUC60N04S6N044 Quick Information

Product Type: MOSFET

Series: IAUC

Canonical Name: IAUC60N04S6N044 OptiMOS™- 6 Power-Transistor

Subcategory: Power MOSFET

IAUC60N04S6N044 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Green Product (RoHS compliant)

IAUC60N04S6N044 Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IAUC60N04S6N044 Features

N-channel OptiMOS™- 6 power MOSFET.
Automotive applications, AEC Q101 qualified.
40V drain-source breakdown voltage.
60A continuous drain current.
Low on-state resistance.

IAUC60N04S6N044 Applications

Automotive power management systems.
High-efficiency power switching.
DC-DC converters.
Load switch applications.

IAUC60N04S6N044 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 40V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 2.6V.

What is the maximum continuous drain current?

The maximum continuous drain current is 60A at 25°C case temperature.

What is the typical drain-source on-state resistance?

The typical drain-source on-state resistance is 3.53mW at 10V gate-source voltage and 30A drain current.

What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

What package is this MOSFET in?

This MOSFET is in a PG-TDSON-8 package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.